PART |
Description |
Maker |
HM514258AZP-8 HM514258AZP-12 |
80ns; V(cc/t): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM 120ns; V(cc/t): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM
|
Hitachi Semiconductor
|
GM71C4256A GM71C4256A-10 GM71C4256A-60 GM71C4256A- |
262144 word x 4 Bit CMOS DRAM 262,144 WORD x 4 BIT CMOS DYNAMIC RAM
|
GoldStar LG[LG Semicon Co.,Ltd.]
|
MR27V452DTP MR27V452D MR27V452DMP MR27V452DRP |
262,144-Word x 16-Bit or 524,288-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
|
OKI[OKI electronic componets] OKI SEMICONDUCTOR CO., LTD.
|
TC55VEM216AXBN40 |
262,144-WORD BY 16-BIT FULL CMOS STATIC RAM
|
TOSHIBA
|
AK5321024 |
262,144 Word by 32 Bit CMOS Dynamic Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
|
HM51258P HM51258P-10 HM51258P-12 HM51258P-15 HM512 |
262,144-word x 1-bit Static Column CMOS Dynamic RAM 262144 word x 1 Bit Static Column CMOS DRAM
|
Hitachi Semiconductor
|
MSM27C201CZ |
262,144-Word x 8-Bit One Time PROM(256K字位一次性可编程ROM 262,144字8位一次性可编程56K字8位一次性可编程ROM的字
|
OKI SEMICONDUCTOR CO., LTD.
|
TC554161AFT-10 TC554161AFT-10L TC554161AFT-70 TC55 |
KEYING PLUG,FOR SKTS 262,144字由16位静态RAM 262,144-WORD BY 16-BIT STATIC RAM 262,144字由16位静态RAM
|
Toshiba, Corp. Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
TC55VCM216ASTN40 TC55VCM216ASTN55 |
262,144-WORD BY 16-BIT FULL CMOS STATIC RAM TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
MSM54V16258A |
262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO 262,144字16位动态随机存储器:快速页面模式型与江
|
OKI SEMICONDUCTOR CO., LTD.
|
V29C51002B-55J V29C51002T-55T V29C51002B-55T V29C5 |
2 MEGABIT 262,144 x 8 BIT 5 VOLT CMOS FLASH MEMORY 2兆位262,144 × 85伏的CMOS闪存 2 MEGABIT 262,144 x 8 BIT 5 VOLT CMOS FLASH MEMORY 2兆位262,144 × 8伏的CMOS闪存
|
Mosel Vitelic, Corp.
|